1TB Storage Capacity , PCIe Interface , M.2 2280 Form Factor , Up to 3500 MB/s Sequential Read Speed , Up to 3300 MB/s Sequential Write Speed , 300 TBW Endurance , 1.5 Million Hour MTBF , AES 256-Bit Encryption , Samsung V-NAND 3-Bit MLC Flash , SMART &


JD125 JD225-44.44%

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  • Mfr Part Number: MZ-V7S1T0B/AM
  • Capacity: 1TB
  • Form Factor: M.2 2280
  • Interface: PCIe Gen 3.0 x4, NVMe 1.3
  • NAND Flash: Samsung V-NAND 3-bit MLC
  • Controller: Samsung Phoenix Controller
  • Cache Memory: Samsung 1GB Low Power DDR4 SDRAM
  • Performance:
    • Sequential Read Speed: Up to 3,500 MB/s
    • Sequential Write Speed: Up to 3,300 MB/s
    • 4K Random Read Speed (QD1): Up to 19K IOPS
    • 4K Random Write Speed (QD1): Up to 60K IOPS
    • 4K Random Read Speed (QD32): Up to 600K IOPS
    • 4K Random Write Speed (QD32): Up to 550K IOPS
  • MTBF: 1,500,000 hours
  • Power Consumption:
    • Average: 6W
    • Maximum: 9W (Burst mode)
    • Idle: 30mW (max)
  • Shock: 1,500 G & 0.5 ms (Half sine)
  • Temperature: 0 - 70 °C Operating Temperature
  • Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
  • Weight: 8.0 g (Max)

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